EEGR215 HW 2: Review of Basic Semiconductors and Analysis Techniques

• I-V curves analysis practice for LED-demonstrated and follow along
• Problems for working on in-class & HW

Plot as semilog scale.

Send me a sample data from last week.

• 1.Draw a bond-diagram to show how Arsenic dopes Silicon n-type. Write a couple of sentences to explain this.
• 2. Explain why the carrier mobility decreases with temperature in Silicon.
• 3. What does a bandgap represent? Will the turn-on voltage of a diode increase or decrease as the bandgap increases?
• 4. What is the capacitance of 10nm thick SiO₂ (k=3.7) with 2 metal plates on either side of it with area 1cm²? Sketch the structure first.
• 5. If I have silicon with hole concentration 2×10¹⁶cm^-3 at room temperature. Draw a band diagram with the conduction band energy (E_c), valence band energy (E_v), and Fermi Level (E_f). Look up the effective density of states in the conduction and valence bands (N_c and N_v) at room temperature.
• 6. Explain what the extrinsic region of doping in a semiconductor is. What happens below this temperature? What happens above this temperature?
• 7. What are the major regions in the I-V curves for a diode?

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